Abstract
The possibility of obtaining a stoichiometric Bi2Se3 film by vacuum-thermal treatment of a Se/Bi heterostructure is demonstrated for the first time. It was found that a stoichiometric Bi2Se3 film can be only produced at a certain ratio of the Se and Bi film thicknesses (d Se/d Bi = 3.13). X-ray-diffraction analysis and Raman spectroscopy were used to study the phase transformations in a Se(141 nm)/Bi(45 nm) heterostructure upon its thermal treatment in a vacuum. The phase transition temperatures at which various crystalline phases are formed were determined. It is shown that Bi2Se3 crystallizes in the Se(141 nm)/Bi(45 nm) heterostructure heated to 493 K in conformity with an exponential law, with a characteristic time in which the equilibrium state is attained equal to 20 min.
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Original Russian Text © V.Ya. Kogai, K.G. Mikheev, G.M. Mikheev, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 15, pp. 34–41.
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Kogai, V.Y., Mikheev, K.G. & Mikheev, G.M. Deposition of stoichiometric Bi2Se3 film by vacuum-thermal treatment of Se/Bi heterostructure. Tech. Phys. Lett. 43, 701–704 (2017). https://doi.org/10.1134/S1063785017080107
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DOI: https://doi.org/10.1134/S1063785017080107