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Radiation enhancement in doped AlGaN-structures upon optical pumping

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Abstract

Spectral characteristics of spontaneous and stimulated luminescence have been studied for molecular beam epitaxy synthesized Al x Ga1–x N/AlN solid solutions with x = 0.5 and 0.74 upon optical pumping by pulse laser radiation with λ = 266 nm. Broadband radiation spectra with a width of ~260 THz for Al0.5Ga0.5N and ~360 THz for Al0.74Ga0.26N have been obtained. The measured enhancement factors are g ≈ 70 cm–1 for Al0.5Ga0.5N at λ ≈ 528 nm and g ≈ 20 cm–1 for Al0.74Ga0.26N at λ ≈ 468 nm.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    P. A. Bokhan, D. E. Zakrevsky, T. V. Malin, I. V. Osinnykh & N. V. Fateev

  2. Novosibirsk State University, Novosibirsk, 630090, Russia

    K. S. Zhuravlev

Authors
  1. P. A. Bokhan
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  2. K. S. Zhuravlev
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  3. D. E. Zakrevsky
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  4. T. V. Malin
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  5. I. V. Osinnykh
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  6. N. V. Fateev
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Corresponding author

Correspondence to D. E. Zakrevsky.

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Original Russian Text © P.A. Bokhan, K.S. Zhuravlev, D.E. Zakrevsky, T.V. Malin, I.V. Osinnykh, N.V. Fateev, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 1, pp. 5–13.

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Bokhan, P.A., Zhuravlev, K.S., Zakrevsky, D.E. et al. Radiation enhancement in doped AlGaN-structures upon optical pumping. Tech. Phys. Lett. 43, 46–49 (2017). https://doi.org/10.1134/S1063785017010059

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  • DOI: https://doi.org/10.1134/S1063785017010059

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