Skip to main content
Log in

High-efficiency two-frequency laser generation in three-barrier nanostructures with ballistic electron transport

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

For asymmetric three-barrier resonance-tunneling structures with thin high barriers, the dependence of the integral transmission coefficient on the amplitude and frequency of strong high-frequency resonance fields during two-photon transitions has been studied in the approximation of an electron distribution function weakly varying at energies on the order of several widths of the quantum level. It is established that, despite the strong dependence of the shape and width of resonance levels on the microwave field amplitude, the general pattern of integral electron–photon interaction in strong fields changes but little in a broad range of variation of the level widths and field amplitudes.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. A. F. Kazarinov and R. A. Suris, Sov. Phys. Semicond. 6, 109 (1972).

    Google Scholar 

  2. M. Helm, E. Colas, P. England, et al., Appl. Phys. Lett. 53, 1714 (1988).

    Article  ADS  Google Scholar 

  3. J. Faist, F. Capasso, and D. L. Sivco, Science 264, 553 (1994).

    Article  ADS  Google Scholar 

  4. M. A. Belkin, F. Capasso, F. Xie, et al., Appl. Phys. Lett. 92, 201101 (2008).

    Article  ADS  Google Scholar 

  5. E. I. Golant, A. B. Pashkovskii, and A. S. Tager, Tech. Phys. Lett. 20, 886 (1994).

    ADS  Google Scholar 

  6. E. I. Golant and A. B. Pashkovskii, J. Exp. Theor. Phys. 85, 130 (1997).

    Article  ADS  Google Scholar 

  7. A. B. Pashkovskii, Semiconductors 45 (6), 743 (2011).

    Article  ADS  Google Scholar 

  8. A. B. Pashkovskii, Elektron. Tekh. Ser. 1. SVCh Tekh. 492 (4), 17(2007).

    Google Scholar 

  9. I. A. Obukhov, Nonequilibrium Phenomena in Electron Devices (Veber, Moscow, 2010) [in Russian].

    Google Scholar 

  10. I. I. Abramov, Nano Mikrosist. Tekh. 109 (8), 7 (2009).

    Google Scholar 

  11. A. B. Pashkovskii, JETP Lett. 93, 559 (2011).

    Article  ADS  Google Scholar 

  12. N. V. Tkach and Yu. A. Seti, JETP Lett. 95, 296 (2012).

    Article  Google Scholar 

  13. T. C. L. G. Sollner et al., Appl. Phys. Lett. 43 (6), 588 (1985).

    Article  ADS  Google Scholar 

  14. E. R. Brown et al., Appl. Phys. Lett. 55 (17), 1777 (1989).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to A. B. Pashkovskii.

Additional information

Original Russian Text © A.A. Borisov, S.S. Zyrin, A.A. Makovetskaya, V.I. Novoselets, A.B. Pashkovskii, N.D. Ursulyak, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 18, pp. 88–94.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Borisov, A.A., Zyrin, S.S., Makovetskaya, A.A. et al. High-efficiency two-frequency laser generation in three-barrier nanostructures with ballistic electron transport. Tech. Phys. Lett. 42, 970–972 (2016). https://doi.org/10.1134/S1063785016090157

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063785016090157

Navigation