Skip to main content
SpringerLink
Log in

Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

Results of studying the formation of InAs quantum dots (QDs) on GaAs(100) substrates by droplet epitaxy using trimethylindium and arsine (AsH3) as precursors are presented. The growth process was carried out at temperatures within 230–400°C in a horizontal reactor for metalorganic vapor phase epitaxy (MOVPE) using high-purity hydrogen as the carrier gas. Data on the influence of process temperature on the QD size and the density of QD array and results of investigation of the low-temperature photoluminescence of obtained samples are presented.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J. S. Kim and N. Koguchi, Appl. Phys. Lett. 85 (24), 5893 (2004).

    Article  ADS  Google Scholar 

  2. Z. M. Wang, B. Liang, K. A. Sablon, et al., Small 3 (2), 235 (2007).

    Article  Google Scholar 

  3. P. Alonso-González, B. Alén, D. Fuster, et al., Appl. Phys. Lett. 91, 163104 (2007).

    Article  ADS  Google Scholar 

  4. Z. M. Wang, K. Holmes, Y. I. Mazur, et al., Nanoscale Res. Lett. 1 (1), 57 (2006).

    Article  ADS  Google Scholar 

  5. R. Kh. Akchurin, I. A. Boginskaya, N. T. Vagapova, A. A. Marmalyuk, and A. A. Panin, Tech. Phys. Lett. 36 (1), 4 (2010).

    Article  ADS  Google Scholar 

  6. R. Kh. Akchurin, I. A. Boginskaya, N. T. Vagapova, A. A. Marmalyuk, and M. A. Ladugin, Tech. Phys. Lett. 36 (8), 724 (2010).

    Article  ADS  Google Scholar 

  7. R. Kh. Akchurin, L. B. Berliner, I. A. Boginskaya, E. G. Gordeev, E. V. Egorova, A. A. Marmalyuk, M. A. Ladugin, and M. A. Surnina, Tech. Phys. 59 (1), 78 (2014).

    Article  Google Scholar 

  8. G. B. Stringfellow, Organometallic Vapor Phase Epitaxy: Theory and Practice (Academic Press, London, 1999).

    Google Scholar 

  9. E. G. Gordeev, R. Kh. Akchurin, and M. A. Surnina, Russ. J. Phys. Chem. A 89 (1), 24 (2015).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Lomonosov State University of Fine Chemical Technology, Moscow, 119571, Russia

    M. A. Surnina, R. Kh. Akchurin & A. A. Marmalyuk

  2. National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, 115409, Russia

    A. A. Marmalyuk

  3. Sigm Plus Company, Moscow, 117342, Russia

    T. A. Bagaev

  4. Orion Research and Production Corporation, Moscow, 111538, Russia

    A. L. Sizov

Authors
  1. M. A. Surnina
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. R. Kh. Akchurin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. A. Marmalyuk
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. T. A. Bagaev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. L. Sizov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to R. Kh. Akchurin.

Additional information

Original Russian Text © M.A. Surnina, R.Kh. Akchurin, A.A. Marmalyuk, T.A. Bagaev, A.L. Sizov, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 14, pp. 66–71.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Surnina, M.A., Akchurin, R.K., Marmalyuk, A.A. et al. Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions. Tech. Phys. Lett. 42, 747–749 (2016). https://doi.org/10.1134/S1063785016070294

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063785016070294

Search

Navigation