Abstract
A kinetic model of the formation of axial heterostructures in nanocrystalline wires (nanowires, NWs) of III–V semiconductor compounds growing according to the vapor–liquid–solid (VLS) mechanism is proposed. A general system of nonstationary equations for effective fluxes of two elements of the same group (e.g., group III) is formulated that allows the composition profile of a heterostructure to be calculated as a function of the coordinate and epitaxial growth conditions, including the flux of a group V element. Characteristic times of the composition relaxation, which determine the sharpness of the heteroboundary (heterointerface), are determined in the linear approximation. A temporal interruption (arrest) of fluxes during the switching of elements for a period exceeding these relaxation times must increase sharpness of the heteroboundary. Model calculations of the composition profile in a double GaAs/InAs/GaAs axial heterostructure have been performed for various NW radii.
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Original Russian Text © V.G. Dubrovskii, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 6, pp. 104–110.
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Dubrovskii, V.G. A model of axial heterostructure formation in III–V semiconductor nanowires. Tech. Phys. Lett. 42, 332–335 (2016). https://doi.org/10.1134/S1063785016030196
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DOI: https://doi.org/10.1134/S1063785016030196