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InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition

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Abstract

The possibility of fabricating InAs/GaSb strained-layer superlattices by metalorganic chemical vapor deposition has been experimentally demonstrated. The results of transmission electron microscopy and photoluminescence spectroscopy investigations showed that the obtained structures comprise an InAs?GaSb superlattice on a GaSb substrate consisting of 2-nm-thick InAs and 3.3-nm-thick GaSb layers.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    R. V. Levin, V. N. Nevedomskii, B. V. Pushnyi & N. A. Bert

  2. Submicron Heterostructures for Microelectronics, Research, and Engineering Center, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    R. V. Levin, B. V. Pushnyi & M. N. Mizerov

Authors
  1. R. V. Levin
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  2. V. N. Nevedomskii
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  3. B. V. Pushnyi
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  4. N. A. Bert
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  5. M. N. Mizerov
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Corresponding author

Correspondence to B. V. Pushnyi.

Additional information

Original Russian Text © R.V. Levin, V.N. Nevedomskii, B.V. Pushnyi, N.A. Bert, M.N. Mizerov, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 2, pp. 79–84.

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Levin, R.V., Nevedomskii, V.N., Pushnyi, B.V. et al. InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition. Tech. Phys. Lett. 42, 96–98 (2016). https://doi.org/10.1134/S1063785016010284

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  • DOI: https://doi.org/10.1134/S1063785016010284

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