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A magnetosensitive thin-film silicon Hall-type field-effect transistor with operating temperature range expanded up to 350°C

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Abstract

We describe a magnetosensitive device consisting of a combination of a thin-film Si transistor with built-in conducting channel (fabricated by the silicon-on-insulator technology) and a Hall-type sensor (HS). The transistor has a double-gate field control system of the metal–insulator–semiconductor–insulator–metal type and operates in the regime of carrier accumulation in the channel at partial depletion of adjacent regions of the Si film. It is established that the device can operate at temperatures up to about 350°C, which is 160–180°C higher than the maximum operating temperature of HSs based on bulk Si crystals and comparable with HSs based on wide-bandgap semiconductors.

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Authors and Affiliations

  1. Institute of Problems of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    A. V. Leonov, A. A. Malykh & V. N. Mordkovich

  2. Milandr Design and Production Corporation, 123182, Moscow, Russia

    M. I. Pavlyuk

Authors
  1. A. V. Leonov
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  2. A. A. Malykh
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  3. V. N. Mordkovich
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  4. M. I. Pavlyuk
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Corresponding author

Correspondence to A. A. Malykh.

Additional information

Original Russian Text © A.V. Leonov, A.A. Malykh, V.N. Mordkovich, M.I. Pavlyuk, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 2, pp. 30–36.

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Leonov, A.V., Malykh, A.A., Mordkovich, V.N. et al. A magnetosensitive thin-film silicon Hall-type field-effect transistor with operating temperature range expanded up to 350°C. Tech. Phys. Lett. 42, 71–74 (2016). https://doi.org/10.1134/S1063785016010272

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  • DOI: https://doi.org/10.1134/S1063785016010272

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