Abstract
The influence of the light of a low-power light-emitting diode on the adsorption processes in SnO2 sensor layers of test structures of gas sensors has been analyzed. It is established that the optical activation of SnO2 surface induces an additional peak of gas sensitivity at temperatures that are lower than the temperature of maximum gas sensitivity of the sensor without illumination. The results indicate that there are two mechanisms of light stimulation of gas adsorption.
Similar content being viewed by others
References
E. A. Tutov, S. V. Ryabtsev, A. V. Shaposhnik, and E. P. Domashevskaya, Solid-State Silicon-Based Sensor Structures (Voronezh State Univ., Voronezh, 2010) [in Russian].
E. Comini, G. Faglia, and G. Sberverglieri, Sens. Actuators B Phys. 78, 73 (2001).
A. M. Gulyaev, Van Van Le, O. B. Sarach, and O. B. Mukhina, Semiconductors 42 (6), 726 (2008).
S. I. Rembeza, D. B. Prosvirin, O. G. Vikin, G. A. Vikin, et al., Sensor, No. 1, 20 (2004).
J. Watson, K. Ihokura, and G. S. V. Colest, Meas. Sci. Technol., No. 4, 717 (1993).
D. V. Russkikh and S. I. Rembeza, Semiconductors 43 (6), 782 (2009).
K. V. Shalimova, Physics of Semiconductors (Lan’, St. Petersburg, 2010) [in Russian].
I. A. Averin, A. A. Karmanov, and I. A. Pronin, Tr. Mezhdunar. Simp. Nadezhnost Kach., No. 1, 214 (2012).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © S.I. Rembeza, T.V. Svistova, N.N. Kosheleva, S.V. Ovsyannikov, V.M.K. Al Tameemi, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 23, pp. 32–39.
Rights and permissions
About this article
Cite this article
Rembeza, S.I., Svistova, T.V., Kosheleva, N.N. et al. Influence of light on the adsorption processes during interaction between reducer gases and a SnO2 film. Tech. Phys. Lett. 41, 1128–1131 (2015). https://doi.org/10.1134/S1063785015120135
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063785015120135