Abstract
Thin a-SiO x : H films have been synthesized for the first time by the gas-jet electron beam plasma chemical vapor deposition method. As the substrate temperature increased from room temperature to 415°C, the thin film growth rate decreased from 2 to 1.15 nm/s, the hydrogen concentration in the thin films decreased from 12.5 to 4.2%, and the oxygen concentration increased from 14.5 to 20.8%. A decrease in the hydrogen content is related to enhanced effusion and thermal desorption. The Raman spectra of Si–Si bonds in the films are typical of materials with amorphous structure.
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Original Russian Text © E.A. Baranov, A.O. Zamchiy, S.Ya. Khmel, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 20, pp. 89–95.
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Baranov, E.A., Zamchiy, A.O. & Khmel, S.Y. Synthesis of a-SiO x : H thin films by the gas-jet electron beam plasma chemical vapor deposition method. Tech. Phys. Lett. 41, 1013–1015 (2015). https://doi.org/10.1134/S1063785015100181
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DOI: https://doi.org/10.1134/S1063785015100181