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Single-crystal GaN/AlN layers on CVD diamond

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Abstract

Original approach to fabricating a GaN/AlN/nanocrystalline diamond structure has been suggested and implemented. The stages of deposition of a structure of this kind include the following: (a) growth of nanocrystalline CVD-diamond on single-crystal AlN (preliminarily grown on a silicon substrate), (b) etch removal of the silicon substrate, and (c) growth of single-crystal GaN on the surface of single-crystal AlN. Single-crystal gallium nitride with a width of the X-ray rocking curve for the (0002) reflection of 0.35° was obtained on a nanocrystalline-diamond substrate.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Afonino, Nizhny Novgorod oblast, 603087, Russia

    O. I. Khrykin, Yu. N. Drozdov, M. N. Drozdov, P. A. Yunin & V. I. Shashkin

  2. Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, 603950, Russia

    S. A. Bogdanov, A. B. Muchnikov, A. L. Vikharev & D. B. Radishev

  3. Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia

    P. A. Yunin

Authors
  1. O. I. Khrykin
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  2. Yu. N. Drozdov
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  3. M. N. Drozdov
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  4. P. A. Yunin
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  5. V. I. Shashkin
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  6. S. A. Bogdanov
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  7. A. B. Muchnikov
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  8. A. L. Vikharev
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  9. D. B. Radishev
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Corresponding author

Correspondence to A. B. Muchnikov.

Additional information

Original Russian Text © O.I. Khrykin, Yu.N. Drozdov, M.N. Drozdov, P.A. Yunin, V.I. Shashkin, S.A. Bogdanov, A.B. Muchnikov, A.L. Vikharev, D.B. Radishev, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 19, pp. 73–80.

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Khrykin, O.I., Drozdov, Y.N., Drozdov, M.N. et al. Single-crystal GaN/AlN layers on CVD diamond. Tech. Phys. Lett. 41, 954–956 (2015). https://doi.org/10.1134/S1063785015100065

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  • DOI: https://doi.org/10.1134/S1063785015100065

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