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Increasing the efficiency of a silicon tunnel MIS injector of hot electrons by using high-K oxides

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Abstract

It is demonstrated theoretically that replacing silicon dioxide in a metal–insulator–semiconductor (MIS) structure with a double-layer insulator HfO2(ZrO2)/SiO2 must lead to a decrease in the relative contribution of electrons with comparatively low energies to the total tunneling current. As a consequence, a suppression of the current component associated with the charge transport into the valence band of Si or from it is predicted for many regimes, especially of the low-energy part of this component. This effect can improve the efficiency of injection devices, such as a transistor with a tunnel MIS emitter or a resonant-tunneling diode based on a heavily doped MIS structure.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St. Petersburg, Russia

    M. I. Vexler

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  1. M. I. Vexler
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Correspondence to M. I. Vexler.

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Original Russian Text © M.I. Vexler, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 17, pp. 103–110.

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Vexler, M.I. Increasing the efficiency of a silicon tunnel MIS injector of hot electrons by using high-K oxides. Tech. Phys. Lett. 41, 863–866 (2015). https://doi.org/10.1134/S1063785015090102

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  • DOI: https://doi.org/10.1134/S1063785015090102

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