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Growth of bulk AlN crystals by vapor-phase epitaxy from atomic Al and NH3

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Abstract

A new approach to obtaining bulk AlN single crystals by vapor-phase epitaxy has been tested. NH3 and Al vapor were used as growth reagents. The following ranges of growth parameters were admissible for the laboratory equipment (experimental growth installation): temperatures of 1050–1500°C at ammonia flow rates of up to 50 sccm and pressures on the order of 10–5–10–4 bar, growth rates of up to 200 μm h–1. At a temperature of 1450°C, samples of strained bulk block AlN crystals with thicknesses of up to 200 μm were obtained in the wurtzite phase in the [0001] direction on MBE templates based on sapphire substrates with a diameter of 2″.

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Authors and Affiliations

  1. SemiTEq Corporation, St. Petersburg, 194156, Russia

    M. Yu. Pogorel’skii, A. N. Alekseev, Yu. V. Pogorel’skii & A. P. Shkurko

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  1. M. Yu. Pogorel’skii
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  2. A. N. Alekseev
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  3. Yu. V. Pogorel’skii
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  4. A. P. Shkurko
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Correspondence to M. Yu. Pogorel’skii.

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Original Russian Text © M.Yu. Pogorel’skii, A.N. Alekseev, Yu. V. Pogorel’skii, A.P. Shkurko, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 17, pp. 83–93.

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Pogorel’skii, M.Y., Alekseev, A.N., Pogorel’skii, Y.V. et al. Growth of bulk AlN crystals by vapor-phase epitaxy from atomic Al and NH3 . Tech. Phys. Lett. 41, 854–858 (2015). https://doi.org/10.1134/S1063785015090084

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  • DOI: https://doi.org/10.1134/S1063785015090084

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