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Electroforming and bipolar resistive switching in Si-SiO2-V2O5-Au binary oxide structure

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Abstract

We have studied bipolar resistive switching (BRS) with memory in a binary oxide structure Si-SiO2-V2O5-Au manufactured by reactive magnetron sputtering. A physical model is proposed that explains the formation of a BRS structure with a nanosized silicon channel in SiO2 and reversible modulation of conductivity in thin V2O5 layer at the channel boundary. The radius of this silicon channel is found from calculations based on the heat equation and atomic force microscopy data.

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Authors and Affiliations

  1. Petrozavodsk State University, Petrozavodsk, 185000, Russia

    V. V. Putrolainen, A. A. Velichko, P. P. Boriskov, A. L. Pergament, G. B. Stefanovich & N. A. Kuldin

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  1. V. V. Putrolainen
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  2. A. A. Velichko
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  3. P. P. Boriskov
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  4. A. L. Pergament
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  5. G. B. Stefanovich
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  6. N. A. Kuldin
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Corresponding author

Correspondence to V. V. Putrolainen.

Additional information

Original Russian Text © V.V. Putrolainen, A.A. Velichko, P.P. Boriskov, A.L. Pergament, G.B. Stefanovich, N.A. Kuldin, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 14, pp. 16–24.

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Putrolainen, V.V., Velichko, A.A., Boriskov, P.P. et al. Electroforming and bipolar resistive switching in Si-SiO2-V2O5-Au binary oxide structure. Tech. Phys. Lett. 41, 672–675 (2015). https://doi.org/10.1134/S1063785015070287

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  • DOI: https://doi.org/10.1134/S1063785015070287

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