Simulation of material sputtering with a focused ion beam
- 71 Downloads
The evolution of the surface of a sample under the action of a focused ion beam (FIB) has been simulated using the level set method in the framework of a model that takes into account the redeposition of atoms primarily sputtered by the incident ions. In order to improve quantitative agreement between the results of simulation and experimental data, special experiments have been performed so as to refine the FIB shape and the model of secondary sputtering of the redeposited material. Using the example of rectangular cavities, it is shown that the proposed approach ensures high-precision simulation of a surface relief formed under the effect of an FIB.
KeywordsTechnical Physic Letter Surface Relief Rectangular Cavity Rede Position Trans Verse Section
Unable to display preview. Download preview PDF.
- 11.O. Ertl, L. Filipovic, and S. Selberherr, Proceedings of the 15th Int. Conf. on Simulation of Semiconductor Processes and Devices (2010), pp. 49–52.Google Scholar