Abstract
A new method for triggering reversely switched dinistors (RSDs) into submicrosecond regimes with high current rise rates dJ/dt is proposed. The method consists in matching the parameters of RSDs and circuit elements in such a way that the initial charge introduced by the reverse pumping pulse is increased by many times even before the current through the load starts to increase sharply. This allows one to eliminate extremely dangerous delays at the switching-on front in the current range of about 500 A/cm2. The efficiency of this method is confirmed by the results of a simulation computer experiment. For example, the calculations for RSDs with a blocking voltage of 5 kV reveal the possibility of increasing the dJ/dt parameter to 3 × 1010 A cm−2 s−1 (this value is tens of times higher than the corresponding one for microsecond switches based on RSDs) at an initial switching-on charge of just 1.25 μC/cm2.
Similar content being viewed by others
References
A. V. Gorbatyuk, I. V. Grekhov, S. V. Korotkov, et al., USSR Inventor’s Certificate no. 1003699 (09.11.1982), Byul. Izobret., No. 39 (1983); A. V. Gorbatyuk, I. V. Grekhov, S. V. Korotkov, et al., Sov. Phys. Tech. Phys. 27, 832 (1982); A. V. Gorbatyuk, I. V. Grekhov, S. V. Korotkov, et al., Sov. Tech. Phys. Lett. 8, 298 (1982).
V. M. Tuchkevich and I. V. Grekhov, New Principles of High-Power Switching by Semiconductor Devices (Nauka, Leningrad, 1988) [in Russian].
A. V. Gorbatyuk, I. V. Grekhov, and A. V. Nalivkin, Solid-State Electron. 31, 1483 (1988).
M. E. Savage, IEEE Trans. Plasma Sci. 28, 1451–1455 (2000); S. Schneider and T. F. Podlesak, IEEE Trans. Plasma Sci. 28, 1520 (2000).
S. V. Korotkov, Extended Abstract of Doctoral Dissertation in Engineering (St. Petersburg, 2003).
S. V. Korotkov, A. G. Lyublinsky, Y. V. Aristov, et al., IEEE Trans. Plasma Sci. 41, 2879 (2013); doi 10.1109/TPS.2013.2267555
A. V. Gorbatyuk, I. V. Grekhov, L. S. Kostina, and A. V. Nalivkin, Sov. Tech. Phys. Lett. 9, 522 (1983).
S. V. Korotkov and A. L. Zhmodikov, Instrum. Exp. Tech. 54, 61 (2011).
Synopsys Sentaurus Device. http://www.synopsys.com
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.V. Gorbatyuk, B.V. Ivanov, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 7, pp. 28–35.
Rights and permissions
About this article
Cite this article
Gorbatyuk, A.V., Ivanov, B.V. An efficient method for reducing the threshold of controlled triggering of fast reversely switched dinistors. Tech. Phys. Lett. 41, 320–323 (2015). https://doi.org/10.1134/S1063785015040082
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063785015040082