Abstract
The process of charge carrier delocalization in high-power semiconductor lasers is examined under high current, pulse-pumped operation conditions. It is established that the carrier delocalization process is mostly determined by the injection of electrons (rather than holes) into the waveguide. Two methods of suppression of carrier delocalization are experimentally demonstrated, which are based on increasing the waveguide bandgap width and on using the waveguide containing a potential energy barrier for electrons in the p-region.
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Original Russian Text © D.A. Veselov, I.S. Shakshin, N.A. Pikhtin, S.O. Slipchenko, Z.N. Sokolova, I.S. Tarasov, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 7, pp. 10–16.
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Veselov, D.A., Shakshin, I.S., Pikhtin, N.A. et al. Suppressing the process of charge carrier delocalization in high-power pulse-pumped semiconductor lasers. Tech. Phys. Lett. 41, 263–265 (2015). https://doi.org/10.1134/S1063785015030293
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DOI: https://doi.org/10.1134/S1063785015030293