Abstract
The equilibrium state in the silicon-carbon-oxygen (Si-O-C) ternary system has been calculated in the framework of the thermodynamics of chemical reactions. It is established that, in the practically important temperature interval of 1000°C < T < 1400°C, the system initially consisting of crystalline Si and gaseous CO tends toward an equilibrium state comprising a mixture of four solid phases (Si, C, SiC, and SiO2) and vapor mixture (predominantly of SiO, CO, Si, and CO2). Equilibrium partial pressures of all gases in the mixture have been calculated. An optimum regime of SiC film growth from Si by the method of atomic substitution is proposed, whereby only SiC phase is growing while SiO2 and C phases are not formed.
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References
J. Fan and P. K. Chu, Silicon Carbide Nanostructures (Springer, Heidelberg, 2014).
T. Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications (Wiley-IEEE Press, New York, 2014).
S. A. Kukushkin and A. V. Osipov, J. Phys. D: Appl. Phys. 47, 313001 (2014).
S. A. Kukushkin, A. V. Osipov, and N. A. Feoktistov, Phys. Solid State 56(8), 1507 (2014).
S. A. Kukushkin and A. V. Osipov, J. Appl. Phys. 113, 024909 (2013).
S. A. Kukushkin and A. V. Osipov, Phys. Solid State 56(4), 792 (2014).
Thermodynamic Properties of Individual Substances, Ed. by V. P. Glushko (Nauka, Moscow, 1979), Vol. 2, Part 2 [in Russian].
Ya. I. Frenkel, Kinetic Theory of Liquids (Nauka, Moscow, 1975) [in Russian].
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Original Russian Text © S.A. Kukushkin, A.V. Osipov, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 6, pp. 1–9.
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Kukushkin, S.A., Osipov, A.V. The equilibrium state in the Si-O-C ternary system during SiC growth by chemical substitution of atoms. Tech. Phys. Lett. 41, 259–262 (2015). https://doi.org/10.1134/S1063785015030244
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DOI: https://doi.org/10.1134/S1063785015030244