Abstract
Large-area (up to 100 cm2) crystalline gallium nitride slabs have been produced by vapor-phase deposition on a ceramic support coated with hexagonal boron nitride. The material was characterized upon grinding and polishing of samples cut from the slabs. It was found that the slab material is an n-type semiconductor with optical, thermal, and mechanical properties close to those of single-crystal gallium nitride produced by other growth techniques.
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Original Russian Text © M.G. Mynbaeva, A.I. Pechnikov, A.A. Sitnikova, D.A. Kirilenko, A.A. Lavrent’ev, E.V. Ivanova, V.I. Nikolaev, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 5, pp. 84–90.
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Mynbaeva, M.G., Pechnikov, A.I., Sitnikova, A.A. et al. Large-area crystalline GaN slabs. Tech. Phys. Lett. 41, 246–248 (2015). https://doi.org/10.1134/S106378501503013X
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DOI: https://doi.org/10.1134/S106378501503013X