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The electric activity of special grain boundaries in multicrystalline silicon grown from metallurgical refined silicon

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Abstract

The properties of special grain boundaries in multicrystalline silicon (mc-Si) grown from metallurgical refined silicon by the Bridgman-Stockbarger method have been studied. The electric activity of grain boundaries was characterized by measuring the electron-beam-induced current. Structural features of the mc-Si samples were studied by scanning electron microscopy, electron-probe microanalysis, and atomic force microscopy techniques.

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Authors and Affiliations

  1. Vinogradov Institute of Geochemistry, Siberian Branch, Russian Academy of Sciences, Irkutsk, 664033, Russia

    S. M. Peshcherova, A. I. Nepomnyashchikh & L. A. Pavlova

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  1. S. M. Peshcherova
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  2. A. I. Nepomnyashchikh
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  3. L. A. Pavlova
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Correspondence to S. M. Peshcherova.

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Original Russian Text © S.M. Peshcherova, A.I. Nepomnyashchikh, L.A. Pavlova, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 22, pp. 30–36.

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Peshcherova, S.M., Nepomnyashchikh, A.I. & Pavlova, L.A. The electric activity of special grain boundaries in multicrystalline silicon grown from metallurgical refined silicon. Tech. Phys. Lett. 40, 1000–1002 (2014). https://doi.org/10.1134/S106378501411025X

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  • DOI: https://doi.org/10.1134/S106378501411025X

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