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The magnetoelectric effect in structures based on metallized gallium arsenide substrates

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Abstract

The magnetoelectric effect in the electromechanical resonance region is studied experimentally for the first time in structures in the form of gallium arsenide substrates with their two sides metallized with thin nickel or cobalt films and gold films (Ni-GaAs-Au and Co-GaAs-Au). The dependence of the magnetoelectric effect on the magnetization field in a Ni-GaAs-Au structure has an anomalous shape that is uncharacteristic of known composite magnetoelectric materials based on ceramic piezoelectrics. The maximum magnetoelectric coefficient under resonance is 81.2 V/A. This corresponds to the giant magnetoelectric effect at room temperature. It is shown that this resonance is characterized by a high Q-factor of up to 8000.

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Authors and Affiliations

  1. Institute of Technical Acoustics, National Academy of Sciences of Belarus, Vitebsk, 210023, Belarus

    V. M. Laletin, A. I. Stognii, N. N. Novitskii & N. N. Poddubnaya

  2. Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, Minsk, 220072, Belarus

    V. M. Laletin, A. I. Stognii, N. N. Novitskii & N. N. Poddubnaya

Authors
  1. V. M. Laletin
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  2. A. I. Stognii
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  3. N. N. Novitskii
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  4. N. N. Poddubnaya
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Corresponding author

Correspondence to N. N. Poddubnaya.

Additional information

Original Russian Text © V.M. Laletin, A.I. Stognii, N.N. Novitskii, N.N. Poddubnaya, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 21, pp. 71–78.

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Laletin, V.M., Stognii, A.I., Novitskii, N.N. et al. The magnetoelectric effect in structures based on metallized gallium arsenide substrates. Tech. Phys. Lett. 40, 969–971 (2014). https://doi.org/10.1134/S1063785014110078

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  • DOI: https://doi.org/10.1134/S1063785014110078

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