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The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures

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Abstract

We have studied the emission characteristics and circularly polarized electroluminescence of light-emitting diodes based on heterostructures with a single (GaAs/GaAsSb/GaAs) or two-layer (GaAs/InGaAs/GaAsSb/GaAs) quantum well (QW) and a Mn-delta-doped layer in the GaAs barrier. The ferromagnetic effect of the delta-layer of Mn on the spin polarization of carriers in QWs based on type-II heterostructures has been observed and studied for the first time. The observed phenomena are described using a model of the exchange interaction of Mn ions in the barrier and holes in the QW.

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Authors and Affiliations

  1. Physico-Technical Research Institute, Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod, 603950, Russia

    O. V. Vikhrova, M. V. Dorokhin, P. B. Demina, B. N. Zvonkov, A. V. Zdoroveishchev, Yu. A. Danilov & I. L. Kalentyeva

Authors
  1. O. V. Vikhrova
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  2. M. V. Dorokhin
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  3. P. B. Demina
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  4. B. N. Zvonkov
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  5. A. V. Zdoroveishchev
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  6. Yu. A. Danilov
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  7. I. L. Kalentyeva
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Corresponding author

Correspondence to M. V. Dorokhin.

Additional information

Original Russian Text © O.V. Vikhrova, M.V. Dorokhin, P.B. Demina, B.N. Zvonkov, A.V. Zdoroveishchev, Yu.A. Danilov, I.L. Kalentyeva, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 20, pp. 96–103.

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Vikhrova, O.V., Dorokhin, M.V., Demina, P.B. et al. The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures. Tech. Phys. Lett. 40, 930–933 (2014). https://doi.org/10.1134/S1063785014100290

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  • DOI: https://doi.org/10.1134/S1063785014100290

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