Abstract
We have studied the effect of low-intensity (I ∼ 1.2 × 105 cm−2 s−1) β radiation on the exfoliation of thin amorphous AlN films (with thicknesses on the order of 100 nm) from (100)-oriented silicon substrate as a result of scratching with a Berkovich pyramid at a linearly increasing load. It is established that AlN film beta-irradiated to a fluence of f = 2.16 × 1010 cm−2 exfoliates at about 10% lower load, while the lateral force acting upon the indenter decreases by about 40%. The obtained results can be used for improving the bonding technology and must be taken into account in assessment of the reliability of thin-film structures subjected to (intentional or accidental) electron irradiation.
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Original Russian Text © Yu.I. Golovin, A.A. Dmitrievskiy, N.Yu. Efremova, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 20, pp. 9–14.
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Golovin, Y.I., Dmitrievskiy, A.A. & Efremova, N.Y. β-Radiation-induced decrease of adhesion in AlN/Si structure. Tech. Phys. Lett. 40, 887–889 (2014). https://doi.org/10.1134/S1063785014100216
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DOI: https://doi.org/10.1134/S1063785014100216