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The forming process in resistive-memory elements based on metal-insulator-semiconductor structures

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Abstract

Using as an example metal-insulator-semiconductor structures based on GaAs with stabilized (by yttrium oxide) zirconium dioxide, which show the effect of resistive-switching random-access memory, the possibility is considered of controlling phenomena associated with the forming process in the insulator and on the insulator-semiconductor interface, as well as in the semiconductor, by measuring the response of the semiconductor.

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Authors and Affiliations

  1. Lobachevskii State University of Nizhni Novgorod, Nizhni Novgorod, 603950, Russia

    S. V. Tikhov, A. P. Kasatkin & M. N. Koryazhkina

  2. Physico-Technical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia

    O. N. Gorshkov & I. N. Antonov

Authors
  1. S. V. Tikhov
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  2. O. N. Gorshkov
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  3. I. N. Antonov
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  4. A. P. Kasatkin
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  5. M. N. Koryazhkina
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Corresponding author

Correspondence to M. N. Koryazhkina.

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Original Russian Text © S.V. Tikhov, O.N. Gorshkov, I.N. Antonov, A.P. Kasatkin, M.N. Koryazhkina, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 19, pp. 18–26.

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Tikhov, S.V., Gorshkov, O.N., Antonov, I.N. et al. The forming process in resistive-memory elements based on metal-insulator-semiconductor structures. Tech. Phys. Lett. 40, 837–840 (2014). https://doi.org/10.1134/S1063785014100137

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  • DOI: https://doi.org/10.1134/S1063785014100137

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