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Contactless transfer of image via the gas phase in a thermoactivated process

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Abstract

The formation of hafnium oxide (HfO2) layers in slit structures by pulsed metalorganic chemicalvapor deposition (MOCVD) method with discrete dosage of reactants has been studied. The MOCVD process employed hafnium tetrakisdipivaloylmethanate as a precursor and oxygen as a gaseous reactant. The slit structure was formed by a silicon plate and a glass substrate with a chromium-film pattern. The slit width was varied within 0.1–2.0 mm, so that the aspect ratio changed from 150 to 30. The deposited layers were studied by the scanning ellipsometry technique. The phenomenon of image transfer from the glass substrate to the opposite plate in the form of a nanosized HfO2 film relief, which reproduces the chromium-film pattern, is discovered. The in-plane resolution of the obtained image in these experiments reached 0.025 mm. This effect can be used for nonlithographic formation of images of film structures.

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Authors and Affiliations

  1. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    Yu. V. Shevtsov, B. M. Kuchumov & I. K. Igumenov

  2. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    V. N. Kruchinin & E. V. Spesivtsev

  3. Khristianovich Institute of Theoretical and Applied Mechanics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    I. F. Golovnev

Authors
  1. Yu. V. Shevtsov
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  2. B. M. Kuchumov
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  3. V. N. Kruchinin
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  4. E. V. Spesivtsev
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  5. I. F. Golovnev
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  6. I. K. Igumenov
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Corresponding author

Correspondence to B. M. Kuchumov.

Additional information

Original Russian Text © Yu.V. Shevtsov, B.M. Kuchumov, V.N. Kruchinin, E.V. Spesivtsev, I.F. Golovnev, I.K. Igumenov, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 18, pp. 8–15.

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Shevtsov, Y.V., Kuchumov, B.M., Kruchinin, V.N. et al. Contactless transfer of image via the gas phase in a thermoactivated process. Tech. Phys. Lett. 40, 779–782 (2014). https://doi.org/10.1134/S1063785014090284

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  • DOI: https://doi.org/10.1134/S1063785014090284

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