Abstract
The peculiarities of the growth of PZT films on heteroepitaxial Ir/YSZ/Si structures under conditions of cathode radio-frequency sputtering of a ceramic target in argon-oxygen mixtures have been studied. It is shown that sputtering in a gas mixture with a high partial pressure of oxygen results in crystallization of the PZT films in a metastable pyrochlore structure, while sputtering in argon or the use of argon in the initial phase of the sputtering yields PZT films with an equilibrium perovskite structure.
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Original Russian Text © V.G. Beshenkov, A.A. Burlakov, A.G. Znamenskii, V.A. Marchenko, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 15, pp. 30–37.
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Beshenkov, V.G., Burlakov, A.A., Znamenskii, A.G. et al. Epitaxy of Pb(Zr, Ti)O3 films on Ir/YSZ/Si under conditions of cathode sputtering: The effect of reactive gas composition. Tech. Phys. Lett. 40, 644–647 (2014). https://doi.org/10.1134/S1063785014080045
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DOI: https://doi.org/10.1134/S1063785014080045