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Direct and indirect mechanisms of auger recombination in n-InGaN

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Abstract

The process of Auger recombination in n-type nitride compounds In x Ga1 − x N at T = 300 K has been numerically simulated. The recombination rate was calculated proceeding from the energy-band structure and wave functions determined using the empirical pseudopotential method. An indirect Auger process with the participation of phonons was analyzed using the second-order perturbation theory and the method of spectral-density functions. It is established that, for compounds emitting light in the visible spectral range, the Auger coefficient can vary from 3.1 × 10−30 to 2.0 × 10−32 cm6/s and indirect recombination plays a secondary role.

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Authors and Affiliations

  1. Ivan Franko Zhytomyr State University, 10008, Zhytomyr, Ukraine

    A. V. Zinovchuk

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  1. A. V. Zinovchuk
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Correspondence to A. V. Zinovchuk.

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Original Russian Text © A.V. Zinovchuk, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 10, pp. 1–8.

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Zinovchuk, A.V. Direct and indirect mechanisms of auger recombination in n-InGaN. Tech. Phys. Lett. 40, 408–410 (2014). https://doi.org/10.1134/S1063785014050277

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  • DOI: https://doi.org/10.1134/S1063785014050277

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