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Formation of a crystallization courtyard in eutectic systems and crystal growth

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Abstract

The so-called crystallization courtyard is investigated that forms in processes of mass crystallization around the Ge and Si crystals and their solid solutions (Ge+Si) during cooling of hypereutectic alloys in the Ge-Al, Si-Al, and (Ge+Si)-Al eutectic systems. For the first time, data on the composition and microhardness of this crystallization courtyard are given and its role is shown as a stopper of cracking in an Al-(Ge,Si) system during rapid cooling after the heating system is turned off. For the first time, it is suggested that a crystallization courtyard forms in all hypereutectic systems (including every system in which the amount of the taken solvent does not correspond to the eutectic point).

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. N. Gurin, V. N. Osipov, L. I. Derkachenko, B. N. Korchunov & T. B. Popova

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  1. V. N. Gurin
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  2. V. N. Osipov
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  3. L. I. Derkachenko
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  4. B. N. Korchunov
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  5. T. B. Popova
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Correspondence to V. N. Gurin.

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Original Russian Text © V.N. Gurin, V.N. Osipov, L.I. Derkachenko, B.N. Korchunov, T.B. Popova, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 5, pp. 27–33.

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Gurin, V.N., Osipov, V.N., Derkachenko, L.I. et al. Formation of a crystallization courtyard in eutectic systems and crystal growth. Tech. Phys. Lett. 40, 199–202 (2014). https://doi.org/10.1134/S1063785014030055

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  • DOI: https://doi.org/10.1134/S1063785014030055

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