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Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures

Technical Physics Letters volume 39, pages 1117–1120 (2013)Cite this article

Abstract

It is shown that photovoltaic converters (PVCs) can be based on GaPNAs/GaP heterostructures, which are of considerable interest for the creation of multijunction solar cells on silicon substrates. It is established that p-i-n structures with undoped GaPNAs layer provide for a more effective separation of charge carriers, which makes it possible to obtain a greater short-circuit current than that in p-n structures with an n-type base. A specific feature in spectral characteristics of the proposed PVCs is the presence of two peaks in the spectra of quantum efficiency, which is related to a complicated band structure of GaPNAs.

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References

  1. W. Shan, W. Walukiewicz, K. M. Yu, et al., Appl. Phys. Lett. 76, 3251 (2000).

    Article  ADS  Google Scholar 

  2. I. A. Buyanowa et al., Appl. Phys. Lett. 52, 81 (2002).

    Google Scholar 

  3. J. F. Ceisz and D. J. Friedman, Semicond. Sci. Technol. 17, 769 (2002).

    Article  ADS  Google Scholar 

  4. J. F. Geisz, D. J. Friedman, and S. R. Kurtz, Proceedings of the 29th IEEE PVSC (2002), p. 864.

  5. J. F. Geisz, J. M. Olson, D. J. Friedman, et al., Proceedings of the 31st IEEE PVSC (2005), p. 695.

  6. A. Ju. Egorov, D. Bernklau, B. Borchet, et al., J. Cryst. Growth 227/228, 545 (2001).

    Article  ADS  Google Scholar 

  7. W. Shan et al., Phys. Rev. Lett. 82, 1221 (1999).

    Article  ADS  Google Scholar 

  8. W. Shan et al., Phys. Status Solidi B 223, 75 (2001).

    Article  ADS  Google Scholar 

  9. A. Yu. Egorov, N. V. Kryzhanovskaya, and M. S. Sobolev, Semiconductors 45, 1164 (2011).

    Article  ADS  Google Scholar 

  10. R. Kudrawiec, J. Appl. Phys. 101, 116101 (2007).

    Article  ADS  Google Scholar 

Download references

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Authors and Affiliations

  1. St. Petersburg Academic University, Nanotechnology Research and Education Center, Russian Academy of Sciences, St. Petersburg, 195220, Russia

    A. I. Baranov, A. S. Gudovskikh, E. V. Nikitina & A. Yu. Egorov

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  1. A. I. Baranov
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  2. A. S. Gudovskikh
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  3. E. V. Nikitina
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  4. A. Yu. Egorov
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Corresponding author

Correspondence to E. V. Nikitina.

Additional information

Original Russian Text © A.I. Baranov, A.S. Gudovskikh, E.V. Nikitina, A.Yu. Egorov, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 24, pp. 88–94.

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Baranov, A.I., Gudovskikh, A.S., Nikitina, E.V. et al. Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures. Tech. Phys. Lett. 39, 1117–1120 (2013). https://doi.org/10.1134/S1063785013120171

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  • DOI: https://doi.org/10.1134/S1063785013120171

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