It is shown that photovoltaic converters (PVCs) can be based on GaPNAs/GaP heterostructures, which are of considerable interest for the creation of multijunction solar cells on silicon substrates. It is established that p-i-n structures with undoped GaPNAs layer provide for a more effective separation of charge carriers, which makes it possible to obtain a greater short-circuit current than that in p-n structures with an n-type base. A specific feature in spectral characteristics of the proposed PVCs is the presence of two peaks in the spectra of quantum efficiency, which is related to a complicated band structure of GaPNAs.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Price excludes VAT (USA)
Tax calculation will be finalised during checkout.
W. Shan, W. Walukiewicz, K. M. Yu, et al., Appl. Phys. Lett. 76, 3251 (2000).
I. A. Buyanowa et al., Appl. Phys. Lett. 52, 81 (2002).
J. F. Ceisz and D. J. Friedman, Semicond. Sci. Technol. 17, 769 (2002).
J. F. Geisz, D. J. Friedman, and S. R. Kurtz, Proceedings of the 29th IEEE PVSC (2002), p. 864.
J. F. Geisz, J. M. Olson, D. J. Friedman, et al., Proceedings of the 31st IEEE PVSC (2005), p. 695.
A. Ju. Egorov, D. Bernklau, B. Borchet, et al., J. Cryst. Growth 227/228, 545 (2001).
W. Shan et al., Phys. Rev. Lett. 82, 1221 (1999).
W. Shan et al., Phys. Status Solidi B 223, 75 (2001).
A. Yu. Egorov, N. V. Kryzhanovskaya, and M. S. Sobolev, Semiconductors 45, 1164 (2011).
R. Kudrawiec, J. Appl. Phys. 101, 116101 (2007).
Original Russian Text © A.I. Baranov, A.S. Gudovskikh, E.V. Nikitina, A.Yu. Egorov, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 24, pp. 88–94.
About this article
Cite this article
Baranov, A.I., Gudovskikh, A.S., Nikitina, E.V. et al. Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures. Tech. Phys. Lett. 39, 1117–1120 (2013). https://doi.org/10.1134/S1063785013120171