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Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures


It is shown that photovoltaic converters (PVCs) can be based on GaPNAs/GaP heterostructures, which are of considerable interest for the creation of multijunction solar cells on silicon substrates. It is established that p-i-n structures with undoped GaPNAs layer provide for a more effective separation of charge carriers, which makes it possible to obtain a greater short-circuit current than that in p-n structures with an n-type base. A specific feature in spectral characteristics of the proposed PVCs is the presence of two peaks in the spectra of quantum efficiency, which is related to a complicated band structure of GaPNAs.

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Correspondence to E. V. Nikitina.

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Original Russian Text © A.I. Baranov, A.S. Gudovskikh, E.V. Nikitina, A.Yu. Egorov, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 24, pp. 88–94.

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Baranov, A.I., Gudovskikh, A.S., Nikitina, E.V. et al. Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures. Tech. Phys. Lett. 39, 1117–1120 (2013).

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