Abstract
Photoinduced degradation of tandem photoconverters with the structure α-Si:H/μc-Si:H and initial efficiency of 10.5% at temperatures of 298, 328, and 353 K is experimentally studied. It has been found that, at a temperature of 298 K, the efficiency of the photoconverters decreases by 1.0–1.2% during long light exposure, while an increase in temperature to 328 K leads to a decrease in efficiency to 0.2%; at a temperature of 353 K, no degradation is observed. To explain these results, a modified H-collision model was used. Thermal-activation energy has been determined for the process that hampers the growth of dangling (ruptured) bonds in the i-α-Si:H layer.
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References
T. Shimizu, Jpn. J. Appl. Phys. 43, 3257 (2004).
J. Izard et al., in Proc. 26th EPVSEC (2011), p. 2403.
S. Sato et al., Prog. Photovolt: Res. Appl. (2012).
V. M. Emel’yanov et al., Semiconductors 47, 679 (2013).
M. J. Powell, R. B. Wehrspohn, and S. C. Deane, J. Non-Cryst. Solids 299–302, 556 (2002).
M. Stutzmann, W. B. Jackson, and C. C. Tsai, Phys. Rev. B 32, 23 (1985).
Z. Y. Wu, J. M. Siefert, and B. Equer, J. Non-Cryst. Solids 137/138, 227 (1991).
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Original Russian Text © V.M. Emel’yanov, A.V. Bobyl’, E.I. Terukov, O.I. Chesta, M.Z. Shvarts, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 20, pp. 40–48.
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Emel’yanov, V.M., Bobyl’, A.V., Terukov, E.I. et al. Photoinduced degradation of α-Si:H/μc-Si:H tandem photoconvertes at elevated temperatures. Tech. Phys. Lett. 39, 906–909 (2013). https://doi.org/10.1134/S1063785013100179
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DOI: https://doi.org/10.1134/S1063785013100179