Abstract
Microdisc resonators based on InAs/GaAs quantum dots separated from a GaAs substrate by selective etching and fixed to a silicon substrate by epoxy glue are studied using luminescence spectroscopy. A disc resonator 6 μm in diameter exhibits quasi-single-mode laser generation at a temperature of 78 K with a threshold power of 320 μW and λ/Δλ ∼ 27000.
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Original Russian Text © A.M. Nadtochiy, N.V. Kryzhanovskaya, M.V. Maximov, A.E. Zhukov, E.I. Moiseev, M.M. Kulagina, K.A. Vashanova, Yu.M. Zadiranov, I.S. Mukhin, E.M.Arakcheeva, D. Livshits, A.A. Lipovskii, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 18, pp. 70–77.
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Nadtochiy, A.M., Kryzhanovskaya, N.V., Maximov, M.V. et al. Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate. Tech. Phys. Lett. 39, 830–833 (2013). https://doi.org/10.1134/S1063785013090216
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DOI: https://doi.org/10.1134/S1063785013090216