Abstract
Semiconductor InGaAs/GaAs injection lasers emitting at λ = 1065 nm have been created with waveguides based on a single InGaAs quantum well. It is found that internal optical losses are determined by the width of an undoped region confined between the n and p type emitters. The room-temperature total output optical power in lasers with 100 μm aperture amounted up to about 2 W at a radiation beam divergence of 15° in the plane perpendicular to the p-n junction.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
S. O. Slipchenko, N. A. Pikhtin, N. V. Fetisova, M. A. Khomylev, A. A. Marmalyuk, D. B. Nikitin, A. A. Padalitsa, I. D. Zalevskii, and I. S. Tarasov, Tech. Phys. Lett. 29, 980 (2003).
A. Pietrzak, P. Crump, Hans Wenzel, et al., IEEE J. Sel. Top. Quant. Electron. 17, 1715 (2011).
S. O. Slipchenko, D. A. Vinokurov, N. A. Pikhtin, Z. N. Sokolova, A. L. Stankevich, I. S. Tarasov, and Zh. I. Alferov, Semiconductors 38, 1430 (2004).
B. Ryvkin and E. Avrutin, J. Appl. Phys. 105, 103107 (2009).
V. I. Shveikin and V. A. Gelovani, Quant. Electron. 32, 683 (2002).
M. V. Maximov, Yu. M. Shernyakov, I. I. Novikov, S. M. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, V. P. Kalosha, V. A. Shchukin, and N. N. Ledentsov, Electron. Lett. 41,no. 13 (2005).
V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, M. V. Karzanova, K. E. Kudryavtsev, S. M. Nekorkin, and A. N. Yablonskii, Proceedings of the 3rd Ross. Symp. “Semiconductor Lasers: Physics and Technology” (St. Petersburg, 2012) [in Russian].
D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. V. Murashova, D. N. Nikolaev, A. L. Stankevich, M. A. Khomylev, V. V. Shamakhov, A. Yu. Leshko, A. V. Lyutetskii, T. A. Nalet, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, and I. S. Tarasov, Semiconductors 39, 370 (2005).
P. Crump, G. Blume, K. Paschke, et al., Proc. SPIE 7198, 719814 (2009).
L. A. Coldren and S. W. Corsine, Diode Lasers and Photonic Integrated Circuits (John Wiley & Sons, New York, 1995).
S. O. Slipchenko, I. S. Shashkin, L. S. Vavilova, D. A. Vinokurov, A. V. Lyutetskii, N. A. Pikhtin, A. A. Podoskin, A. L. Stankevich, N. V. Fetisova, and I. S. Tarasov, Semiconductors 44, 661 (2009).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © S.O. Slipchenko, A.A. Podoskin, N.A. Pikhtin, A.Yu. Leshko, A.V. Rozhkov, I.S. Tarasov, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 8, pp. 9–16.
Rights and permissions
About this article
Cite this article
Slipchenko, S.O., Podoskin, A.A., Pikhtin, N.A. et al. Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well. Tech. Phys. Lett. 39, 364–366 (2013). https://doi.org/10.1134/S1063785013040251
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063785013040251