Abstract
The formation of a silicon-iron (Si/Fe) interface has been studied in situ by the method of high-resolution photoelectron spectroscopy using synchrotron radiation. The experiments were performed under ultrahigh vacuum conditions (at a residual pressure of 3 × 10−10 Torr) in a range of Si coating thicknesses within 0.04–0.45 nm. It is established that the process begins with the formation of a FeSi silicide and Fe-Si solid solution on the iron substrate surface. As the Si coating thickness increases, the solid solution converts into ferromagnetic (Fe3Si) and nonmagnetic (FeSi) silicides. It is shown that thermostimulated solid-state reactions leading to the transformation of FeSi and Fe3Si silicides into a semiconducting β-FeSi2 silicide start at a temperature close to 600°C.
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Original Russian Text © M.V. Gomoyunova, G.S. Grebenyuk, K.M. Popov, I.I. Pronin, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 8, pp. 1–8.
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Gomoyunova, M.V., Grebenyuk, G.S., Popov, K.M. et al. Initial stages of silicon-iron interface formation. Tech. Phys. Lett. 39, 360–363 (2013). https://doi.org/10.1134/S1063785013040184
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DOI: https://doi.org/10.1134/S1063785013040184