Abstract
Silicon carbide NH-SiC polytypes with N = 2, 4, 6, and 8 are considered as substrates for the epitaxial formation of graphene. The density of states for the substrates is described using the Haldane-Anderson model. It is shown that this model always leads to the appearance of two gaps in the graphene spectrum, which are adjacent to the valence and conduction bands of the substrate. The gap widths are determined by the ratio of the energy of interatomic interaction in the free-standing graphene sheet and the energy of graphene-substrate interaction. If this ratio is very small, the gap widths may increase so as to jointly cover almost the entire bandgap of the substrate; on the contrary, if this ratio is extremely large, both gaps exhibit narrowing and become negligibly small.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, Rev. Mod. Phys. 81, 109 (2009).
D. R. Cooper, B. D’Anjou, N. Ghattamaneni, B. Harack, M. Hilke, A. Horth, N. Majlis, M. Massicotte, L. Vandsburger, E. Whiteway, and V. Yu, arXiv: 1110.6557.
J. Haas, W. A. de Heer, and E. H. Conrad, J. Phys. C: Condens. Matter 20, 323202 (2008).
W. A. de Heer, C. Berger, X. Wu, M. Sprinkle, Y. Hu, M. Ruan, J. A. Stroscio, P. N. Eirst, R. Haddon, B. Piot, C. Faugeras, M. Potemski, and J.-S. Moon, J. Phys. D: Appl. Phys. 43, 374007 (2010).
Th. Seyller, A. Botswick, K. V. Emtsev, K. Horn, L. Ley, J. L. McChestney, T. Ohta, J. D. Riley, E. Rotenberg, and F. Speck, Phys. Status Solidi (b) 245, 1436 (2008).
S. Yu. Davydov, Semiconductors 47, 95 (2013).
F. D. M. Haldane and P. W. Anderson, Phys. Rev. B 13, 2553 (1976).
C. Persson and U. Lindefelt, Mater. Sci. Forum, 264–268, 275 (1998).
Yu. Goldberg, M. T. Levinshtein, and S. L. Rumyantsev, Properties of Advanced Semiconductor Materials: GaN, AlN, BN, SiGe, Ed. by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (Wiley, New York, 2001), pp. 93–148.
S. Yu. Davydov, Semiconductors 41, 696 (2007).
A. Mattausch and O. Pankratov, Phys. Rev. Lett. 99, 076802 (2007).
Th. Jayasekera, S. Xu, K. W. Kim, and M. B. Nardelli, Phys. Rev. B 84, 035442 (2011).
L. Vitali, C. Riedl, R. Ohmann, I. Brihuega, U. Starke, and K. Kern, Surf. Sci. 602, L127 (2008).
O. Pankratov, S. Hensel, and M. Bocksstedte, arXiv: 1009.2185.
S. Goler, C. Coletti, V. Pellegrini, K. V. Emtsev, U. Starke, F. Beltram, and S. Heun, arXiv: 1111.4918.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © S.Yu. Davydov, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 2, pp. 7–14.
Rights and permissions
About this article
Cite this article
Davydov, S.Y. Gaps in the spectrum of epitaxial graphene formed on silicon carbide polytypes. Tech. Phys. Lett. 39, 101–104 (2013). https://doi.org/10.1134/S1063785013010343
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063785013010343