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Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al2O3 and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions

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Abstract

Hexagonal indium nitride (InN) films on (111)- and (100)-oriented yttria-stabilized zirconia (YSZ) substrates and (0001)-oriented Al2O3 substrates have been grown for the first time at a rate of 1 μm/h by the method of metalorganic vapor-phase epitaxy with plasma-assisted nitrogen activation in an electron cyclotron resonance discharge generated by gyrotron radiation at low-temperature (350°C) growth. InN films grown without buffer layers possess a textured polycrystalline structure. Using an InN/GaN double buffer layer, single-crystalline InN films have been obtained on Al2O3(0001) substrates. Data on the morphology, structure, and photoluminescent properties of the obtained InN films are presented.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    Yu. N. Buzynin, M. E. Viktorov, A. V. Vodop’yanov, S. V. Golubev, M. N. Drozdov, Yu. N. Drozdov, A. Yu. Luk’yanov, D. A. Mansfeld, E. V. Skorokhodov, O. I. Khrykin & V. I. Shashkin

  2. Institute of Applied Physics, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    Yu. N. Buzynin, M. E. Viktorov, A. V. Vodop’yanov, S. V. Golubev, M. N. Drozdov, Yu. N. Drozdov, A. Yu. Luk’yanov, D. A. Mansfeld, E. V. Skorokhodov, O. I. Khrykin & V. I. Shashkin

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  1. Yu. N. Buzynin
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  2. M. E. Viktorov
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  3. A. V. Vodop’yanov
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  4. S. V. Golubev
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  5. M. N. Drozdov
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  6. Yu. N. Drozdov
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  7. A. Yu. Luk’yanov
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  8. D. A. Mansfeld
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  9. E. V. Skorokhodov
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  10. O. I. Khrykin
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  11. V. I. Shashkin
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Corresponding author

Correspondence to Yu. N. Buzynin.

Additional information

Original Russian Text © Yu.N. Buzynin, M.E. Viktorov, A.V. Vodop’yanov, S.V. Golubev, M.N. Drozdov, Yu.N. Drozdov, A.Yu. Luk’yanov, D.A. Mansfeld, E.V. Skorokhodov, O.I. Khrykin, V.I. Shashkin, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 24, pp. 86–93.

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Buzynin, Y.N., Viktorov, M.E., Vodop’yanov, A.V. et al. Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al2O3 and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions. Tech. Phys. Lett. 39, 51–54 (2013). https://doi.org/10.1134/S1063785013010069

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  • DOI: https://doi.org/10.1134/S1063785013010069

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