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A magnetically controlled LED with S-shaped current-voltage characteristic

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Abstract

A p-i-n light-emitting diode (LED) structure with InGaAs/GaAs quantum wells has been manufactured by combining the vapor phase epitaxy and laser ablation methods. The obtained heterostructures exhibit a negative differential resistance and the magnetodiode effect at 77 K. The proposed LED structure admits (i) switching from the low- to high-resistance state by applied pulsed bias voltage and (ii) electroluminescence quenching by external magnetic field.

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Authors and Affiliations

  1. Physico-Technical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603600, Russia

    A. V. Kudrin, M. V. Dorokhin & Yu. A. Danilov

  2. Nizhni Novgorod State University, Nizhni Novgorod, 603600, Russia

    A. V. Kudrin, M. V. Dorokhin & Yu. A. Danilov

Authors
  1. A. V. Kudrin
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  2. M. V. Dorokhin
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  3. Yu. A. Danilov
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Correspondence to A. V. Kudrin.

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Original Russian Text © A.V. Kudrin, M.V. Dorokhin, Yu.A. Danilov, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 22, pp. 87–94.

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Kudrin, A.V., Dorokhin, M.V. & Danilov, Y.A. A magnetically controlled LED with S-shaped current-voltage characteristic. Tech. Phys. Lett. 38, 1045–1047 (2012). https://doi.org/10.1134/S1063785012110247

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  • DOI: https://doi.org/10.1134/S1063785012110247

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