Abstract
Results of ab initio band calculations for a layered nonmagnetic SrAgSeF semiconductors consisting of [SrF]/[AgSe] alternating blocks show that the partial O → F substitution leads to a semiconductormetal phase transition due to “metallization” of the [AgSe] bocks. The oxygen-doped SrAgSeF1 − x O x phase possesses a metal/semiconductor periodic structure formed by alternating [AgSe] and [SrF1 − x O x ] blocks, respectively. On the contrary, the partial N → F substitution induces a semiconductor-magnetic half-metal phase transition. The resulting SrAgSeF1 − x N x system may be of interest as a new material for spintronics.
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Original Russian Text © V.V. Bannikov, A.L. Ivanovskii, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 22, pp. 71–77.
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Bannikov, V.V., Ivanovskii, A.L. Semiconductor-metal and semiconductor-magnetic half-metal phase transitions in layered SrAgSeF phases doped with oxygen and nitrogen. Tech. Phys. Lett. 38, 1037–1039 (2012). https://doi.org/10.1134/S1063785012110181
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DOI: https://doi.org/10.1134/S1063785012110181