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Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system


Using a method of high-frequency magnetron sputtering, the structures W(150 nm)/HfO2(5 nm)/Si(100) were prepared and were further annealed either at 500°C in vacuum for 30 min or in an atmosphere of argon at 950°C for 12 s. Study of the capacitance-voltage characteristics of these structures showed that high-temperature annealing leads to a decrease in the maximum specific capacitance in accumulation (from 4.8 × 10−6 to 3.2 × 10−6 F/cm2) and dielectric constant (from 27 to 23). Using time-of-flight secondary-ion mass spectrometry, it is established that growth of a WO x phase at the W/HfO2 interface and a HfSi x O y silicate phase at the HfO2/Si (100) interface occurs during annealing. In addition, the total thickness of the intermediate oxide layer exceeds the thickness of the initial HfO2 film by 30%.

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Correspondence to V. I. Rudakov.

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Original Russian Text © V.I. Rudakov, E.A. Bogoyavlenskaya, Yu.I. Denisenko, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 21, pp. 48–55.

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Rudakov, V.I., Bogoyavlenskaya, E.A. & Denisenko, Y.I. Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system. Tech. Phys. Lett. 38, 982–984 (2012).

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  • Technical Physic Letter
  • Rapid Thermal Annealing
  • Tungsten Oxide
  • Silicate Phase
  • Direct Tunneling