Using a method of high-frequency magnetron sputtering, the structures W(150 nm)/HfO2(5 nm)/Si(100) were prepared and were further annealed either at 500°C in vacuum for 30 min or in an atmosphere of argon at 950°C for 12 s. Study of the capacitance-voltage characteristics of these structures showed that high-temperature annealing leads to a decrease in the maximum specific capacitance in accumulation (from 4.8 × 10−6 to 3.2 × 10−6 F/cm2) and dielectric constant (from 27 to 23). Using time-of-flight secondary-ion mass spectrometry, it is established that growth of a WO x phase at the W/HfO2 interface and a HfSi x O y silicate phase at the HfO2/Si (100) interface occurs during annealing. In addition, the total thickness of the intermediate oxide layer exceeds the thickness of the initial HfO2 film by 30%.
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“Sintez, Svoistva i Primenenie Dielektrikov s Vysokoi Dielectricheskoi Pronitsaemost’ju v Kremnievyh Priborah” (“Synthesis, Properties and Applications of Dielectrics with High Dielectric Constant in Silicon Based Devices”), Ed. by A. L. Aseev and V. A. Gritsenko (Novosibirsk: Publishing House of SB RAS. 157 s. (2011) [in Russian].
J. Robertson, Eur. Phys. J. Appl. Phys. 28, 265 (2004).
S.-W. Jeong, K. S. Kim, M. T. You, et al., J. Korean Phys. Soc. 47, S402 (2005).
R. Jiang and Z-F. Li, Chin. Phys. Lett. 26(5), 057101 (2009).
T. -T. Tan, Zh.-T. Liu, W.-T. Liu, et al., Chin Phys. Lett. 25(10), 3750 (2008).
H. Kobayashi, K. Imamura, K. Fukayama, et al., Surf. Sci. 602, 1848 (2008).
E. J. Preisler, S. Guha, M. Copel, et al., Appl. Phys. Lett. 85(25), 6230 (2004).
T. Inoue, K. Suzuki, and H. Miura, Proceedings of the Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD) (2009), pp.198–202.
V. I. Rudakov, E. A. Bogoyavlenskaya, Yu. I. Denisenko, et al., Russ. Microelectron. 40(6), 383 (2011).
K.J. Yang and H. Chenming, IEEE Trans. on Electron. Dev. 46(7), 1500 (1999).
Original Russian Text © V.I. Rudakov, E.A. Bogoyavlenskaya, Yu.I. Denisenko, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 21, pp. 48–55.
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Rudakov, V.I., Bogoyavlenskaya, E.A. & Denisenko, Y.I. Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system. Tech. Phys. Lett. 38, 982–984 (2012). https://doi.org/10.1134/S1063785012110120
- Technical Physic Letter
- Rapid Thermal Annealing
- Tungsten Oxide
- Silicate Phase
- Direct Tunneling