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Signal amplification under stochastic resonance in vanadium dioxide film

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Abstract

The phenomenon of stochastic resonance with an input signal gain of 1.6 times was observed in the planar structure that is connected in series with the loading resistor and has a VO2 conducting channel. It was shown that the signal-to-noise ratio transferring in the circuit can reach 250 times.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    V. S. Aliev, S. G. Bortnikov & M. A. Dem’yanenko

Authors
  1. V. S. Aliev
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  2. S. G. Bortnikov
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  3. M. A. Dem’yanenko
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Correspondence to V. S. Aliev.

Additional information

Original Russian Text © V.S. Aliev, S.G. Bortnikov, M.A. Dem’yanenko, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 21, pp. 13–21.

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Aliev, V.S., Bortnikov, S.G. & Dem’yanenko, M.A. Signal amplification under stochastic resonance in vanadium dioxide film. Tech. Phys. Lett. 38, 965–968 (2012). https://doi.org/10.1134/S1063785012110028

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  • DOI: https://doi.org/10.1134/S1063785012110028

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