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Calculating the extended defect contrast for the X-ray-beam-induced current method

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Abstract

The contrast of extended defects representing dislocations and grain boundaries has been calculated for the X-ray-beam-induced current (XBIC) method. It is established that the maximum contrast increases with the diffusion length of excess charge and decreases with increasing X-ray beam width. The simulated XBIC profile contrasts are compared to experimentally measured patterns.

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    Ya. L. Shabel’nikova, E. B. Yakimov, M. V. Grigor’ev, R. R. Fahrtdinov & V. A. Bushuev

  2. Moscow State University, Moscow, 119991, Russia

    Ya. L. Shabel’nikova, E. B. Yakimov, M. V. Grigor’ev, R. R. Fahrtdinov & V. A. Bushuev

Authors
  1. Ya. L. Shabel’nikova
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  2. E. B. Yakimov
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  3. M. V. Grigor’ev
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  4. R. R. Fahrtdinov
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  5. V. A. Bushuev
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Corresponding author

Correspondence to Ya. L. Shabel’nikova.

Additional information

Original Russian Text © Ya.L. Shabel’nikova, E.B. Yakimov, M.V. Grigor’ev, R.R. Fahrtdinov, V.A. Bushuev, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 20, pp. 1–7.

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Shabel’nikova, Y.L., Yakimov, E.B., Grigor’ev, M.V. et al. Calculating the extended defect contrast for the X-ray-beam-induced current method. Tech. Phys. Lett. 38, 913–916 (2012). https://doi.org/10.1134/S1063785012100239

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  • DOI: https://doi.org/10.1134/S1063785012100239

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