Abstract
A model is proposed for description of a humplike feature that was previously observed in the lowfrequency capacitance-voltage (C-U) characteristics of MOS capacitors with oxide layers containing silicon nanoparticles. The formation of this feature is related to variation (at the frequency of measurements) of a charge accumulated in the oxide due to injection of charge carriers from electrodes and their migration by tunneling through oxide along linear chains formed by Si nanoparticles (with a certain spread of tunneling distances in the chain). The adequacy of the model is illustrated with the simple example of metal-oxidesilicon (MOS) capacitor with a planar array of Si nanoparticles in the oxide and a monopolar injection of holes from the accumulation layer of the p-type semiconductor. A C-U curve measured on an MOS capacitor with amorphous Si clusters is presented, which closely resembles curves with a two-hump feature predicted by the proposed model.
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References
S. A. Arzhannikova, M. D. Efremov, G. N. Kamaev, D. V. Marin, V. A. Volodin, and A. A. Voshchenkov, Proceedings of the 6th Int. Conf. “Amorphous and Micro-crystalline Semiconductors” (July 7–9, St. Petersburg, 2008), pp. 162–163 [in Russian].
M. D. Efremov, G. N. Kamaev, V. A. Volodin, S. A. Arzhannikova, G. A. Kachurin, S. G. Cherkova, A. V. Kretinin, V. V. Malyutina-Bronskaya, and D. V. Marin, Semiconductors 39, 910 (2005).
J. Shi, L. Wu, X. Huang, J. Liu, Z. Ma, W. Li, X. Li, J. Xu, D. Wu, A. Li, and K. Chen, Solid State Commun. 123, 437 (2002).
L. W. Yu, K. J. Chen, L. C. Wu, M. Dai, W. Li, and X. F. Huang, Phys. Rev. B 71, 245305 (2005).
A. A. Evtukh, V. G. Litovchenko, O. L. Bratus’, and A. Yu. Kizyak, Proceedings of the 2nd Int. Sci. Conf. “Nanostructural Materials: Russia-Ukraine-Belarus” (October 19–22, Kiev, 2010), p. 419 [in Russian].
I. V. Antonova, Electrical Properties of Semiconductor Nanocrystals and Quantum Dots in Dielectric Matrix, in Nanocrystals and Quantum Dots in Group IV Semiconductors, Ed. by T. V. Torchynska and Yu. V. Vorobiev (American Scientific Publishers, 2010), pp. 149–815.
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Original Russian Text © V.A. Stuchinsky, G.N. Kamaev, M.D. Efremov, S.A. Arzhannikova, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 18, pp. 45–52.
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Stuchinsky, V.A., Kamaev, G.N., Efremov, M.D. et al. A model to describe the humplike feature observed in the accumulation branch of capacitance-voltage characteristics of MOS capacitors with oxide-hosted silicon nanoparticles. Tech. Phys. Lett. 38, 845–848 (2012). https://doi.org/10.1134/S106378501209026X
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DOI: https://doi.org/10.1134/S106378501209026X