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Decreasing the role of transverse spatial electron transport and increasing the output power of heterostructure field-effect transistors

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Abstract

We present the first results of development of high-power field-effect transistors (FETs) based on a GaAs heterostructure with quantum well and additional potential barriers optimized to reduce the role of transverse spatial electron transport, which leads to a 1.5-fold increase in the output power. The proposed FETs with a gate length of 0.4–0.5 μm and a total gate width of 0.8 mm exhibit a gain above 8 dB at a frequency of 10 GHz, a specific output power above 1.4 W/mm, and an up to 50% power added efficiency.

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Authors and Affiliations

  1. ISTOK Research and Production Corporation (State Unitary Enterprise), Fryazino, Moscow oblast, 141190, Russia

    V. M. Lukashin, A. B. Pashkovskii, K. S. Zhuravlev, A. I. Toropov, V. G. Lapin & A. B. Sokolov

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  1. V. M. Lukashin
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  2. A. B. Pashkovskii
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  3. K. S. Zhuravlev
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  4. A. I. Toropov
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  5. V. G. Lapin
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  6. A. B. Sokolov
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Corresponding author

Correspondence to V. M. Lukashin.

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Original Russian Text © V.M. Lukashin, A.B. Pashkovskii, K.S. Zhuravlev, A.I. Toropov, V.G. Lapin, A.B. Sokolov, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 17, pp. 84–89.

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Lukashin, V.M., Pashkovskii, A.B., Zhuravlev, K.S. et al. Decreasing the role of transverse spatial electron transport and increasing the output power of heterostructure field-effect transistors. Tech. Phys. Lett. 38, 819–821 (2012). https://doi.org/10.1134/S1063785012090088

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  • DOI: https://doi.org/10.1134/S1063785012090088

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