Abstract
Light-emitting diode structures with an InGaAs/GaAs quantum well and a ferromagnetic GaMnSb layer as a p-type semiconductor have been manufactured and investigated. A magnetic-field-induced circular polarization of electroluminescence in these structures has been obtained, the degree of which (0.012 at 0.37 T) is almost constant in the temperature interval of 10–50 K. Circular polarization is determined by the injection of spin-polarized holes from the ferromagnetic GaMnSb layer.
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Original Russian Text © M.V. Dorokhin, E.I. Malysheva, A.V. Zdoroveishchev, Yu.A. Danilov, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 16, pp. 69–77.
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Dorokhin, M.V., Malysheva, E.I., Zdoroveishchev, A.V. et al. Spin-polarized light-emitting diodes based on heterostructures with a GaAs/InGaAs/GaAs quantum well and ferromagnetic GaMnSb injection layer. Tech. Phys. Lett. 38, 764–767 (2012). https://doi.org/10.1134/S1063785012080184
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DOI: https://doi.org/10.1134/S1063785012080184