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Creating micron regions with modified luminescent properties and topology on CdS x Se1 − x films by laser annealing

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Abstract

Laser annealing of thin polycrystalline films of CdS x Se1 − x solid solutions has a threshold character, modifies the local topological relief, and produces a jumplike change in the luminescent properties of the material in the processed region. The possibility of creating local regions with sharply modified physical properties on a micron-precise scale makes the proposed technique a promising tool for the production of semi-conductor sensor chips.

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Authors and Affiliations

  1. Saratov State University, Saratov, 410012, Russia

    D. N. Bratashov, S. A. Klimova, A. A. Serdobintsev, I. V. Malyar & S. V. Stetsyura

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  1. D. N. Bratashov
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  2. S. A. Klimova
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  3. A. A. Serdobintsev
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  4. I. V. Malyar
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  5. S. V. Stetsyura
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Correspondence to S. V. Stetsyura.

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Original Russian Text © D.N. Bratashov, S.A. Klimova, A.A. Serdobintsev, I.V. Malyar, S.V. Stetsyura, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 12, pp. 45–52.

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Bratashov, D.N., Klimova, S.A., Serdobintsev, A.A. et al. Creating micron regions with modified luminescent properties and topology on CdS x Se1 − x films by laser annealing. Tech. Phys. Lett. 38, 572–575 (2012). https://doi.org/10.1134/S106378501206020X

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  • DOI: https://doi.org/10.1134/S106378501206020X

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