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Numerical simulation of spatially nonuniform switching in silicon avalanche sharpening diodes

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Abstract

The process of spatially nonuniform switching in high-voltage silicon diodes operating in the delayed avalanche regime has been numerically simulated. The dependence of the transient process on the ratio between the total diode cross-section area and the area of the region where the switching takes place has been studied. The switching time (60–70 ps) and qualitative form of the transient characteristic agree with the available experimental data. It is established that a rapid drop of the diode voltage begins after the ionization front has traveled over most of the base and then continues due to secondary avalanche breakdown of the base filled with free carriers. Thus the time of switching to the conducting state exhibits no direct correlation with the velocity of ionization front propagation.

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References

  1. I. V. Grekhov and A. F. Kardo-Sysoev, Sov. Tech. Phys. Lett. 5, 395 (1979).

    Google Scholar 

  2. D. Benzel and M. Pocha, Rev. Sci. Instr. 56, 1456 (1985).

    Article  ADS  Google Scholar 

  3. Zh. I. Alferov, I. V. Grekhov, V. M. Efanov, A. F. Kardo-Sysoev, V. I. Korol’kov, and M. N. Stepanova, Sov. Tech. Phys. Lett. 13, 454 (1987).

    Google Scholar 

  4. A. F. Kardo-Sysoev, New Power Semiconductor Devices for Generation of Nanoand Subnanosecond Pulses, in Ultra-Wideband Radar Technology, Ed. by J. D. Taylor (CRS Press, Boca Raton, 2001).

    Google Scholar 

  5. I. V. Grekhov, IEEE Trans. Plasma Sci. 38, 1118 (2010).

    Article  ADS  Google Scholar 

  6. R. J. Focia, E. Schamiloghu, C. B. Flederman, F. J. Agee, and J. Gaudet, IEEE Trans. Plasma Sci. 25, 138 (1997).

    Article  ADS  Google Scholar 

  7. Yu. D. Bilenko, M. E. Levinshtein, M. V. Popova, and V. S. Yuferev, Sov. Phys. Semicond. 17, 1156 (1983).

    Google Scholar 

  8. A. F. Kardo-Sysoev and M. V. Popova, Semiconductors 30, 431 (1996).

    ADS  Google Scholar 

  9. H. Jalali, R. Joshi, and J. Gaudet, IEEE Trans. Electron Dev. 45, 1761 (1998).

    Article  ADS  Google Scholar 

  10. P. Rodin, U. Ebert, W. Hundsdorfer, and I. V. Grekhov, J. Appl. Phys. 92, 1971 (2002).

    Article  ADS  Google Scholar 

  11. I. V. Grekhov and P. B. Rodin, Tech. Phys. Lett. 37, 849 (2011).

    Article  ADS  Google Scholar 

  12. P. Rodin, A. Rodina, and I. Grekhov, J. Appl. Phys. 98, 094506 (2005).

    Article  ADS  Google Scholar 

  13. E. V. Astrova, V. B. Voronkov, V. A. Kozlov, and A. A. Lebedev, Semicond. Sci. Technol. 13, 488 (1998).

    Article  ADS  Google Scholar 

  14. A. Minarsky and P. Rodin, Solid-State Electron. 41, 813 (1997).

    Article  ADS  Google Scholar 

  15. S. N. Vainshtein, Yu. V. Zhilyaev, and M. E. Levinshtein, Sov. Tech. Phys. Lett. 14, 664 (1988).

    Google Scholar 

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    P. B. Rodin & I. V. Grekhov

  2. St. Petersburg Academic University, Nanotechnology Research and Education Center, Russian Academy of Sciences, St. Petersburg, 195220, Russia

    A. M. Minarsky

Authors
  1. P. B. Rodin
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  2. A. M. Minarsky
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  3. I. V. Grekhov
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Correspondence to P. B. Rodin.

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Original Russian Text © P.B. Rodin, A.M. Minarsky, I.V. Grekhov, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 11, pp. 78–87.

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Rodin, P.B., Minarsky, A.M. & Grekhov, I.V. Numerical simulation of spatially nonuniform switching in silicon avalanche sharpening diodes. Tech. Phys. Lett. 38, 535–539 (2012). https://doi.org/10.1134/S1063785012060144

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