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The effect of barrier width in coupled asymmetric double quantum well structure on passive mode-locking region of existence

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Abstract

Semiconductor two-sectional laser diodes with active region, consisting of two InGaAs quantum wells of different width separated with GaAs barrier are investigated. At barrier thickness of 2 nm quantum wells are coupled and diagonal optical transition originates between them. Peak in absorption spectra of lasing structure related to this diagonal transition is observed. An additional region of passive mode-locking due to this absorption peak takes place at low reverse biases on absorber section.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute of the Russian Academy of Sciences, St. Petersburg, 194021, Russia

    M. S. Buyalo, I. M. Gadzhiyev, I. O. Bakshaev, Yu. M. Zadiranov, N. D. Il’inskaya & E. L. Portnoi

  2. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, 119991, Russia

    A. A. Gorbazevich

  3. Nanotechnology Research and Education Centre, Russian Academy of Sciences, St. Petersburg Academic University, St. Petersburg, 194021, Russia

    A. Yu. Egorov

Authors
  1. M. S. Buyalo
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  2. A. A. Gorbazevich
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  3. A. Yu. Egorov
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  4. I. M. Gadzhiyev
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  5. I. O. Bakshaev
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  6. Yu. M. Zadiranov
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  7. N. D. Il’inskaya
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  8. E. L. Portnoi
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Correspondence to M. S. Buyalo.

Additional information

Original Russian Text © M.S. Buyalo, A.A. Gorbazevich, A.Yu. Egorov, I.M. Gadzhiyev, I.O. Bakshaev, Yu.M. Zadiranov, N.D. Il’inskaya, E.L. Portnoi, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 7, pp. 31–39.

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Buyalo, M.S., Gorbazevich, A.A., Egorov, A.Y. et al. The effect of barrier width in coupled asymmetric double quantum well structure on passive mode-locking region of existence. Tech. Phys. Lett. 38, 316–319 (2012). https://doi.org/10.1134/S1063785012040037

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  • DOI: https://doi.org/10.1134/S1063785012040037

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