Abstract
A light-emitting diode (LED) structure based on group III nitride has been grown for the first time on Si(111) substrate with SiC buffer nanolayer (50- to 200-nm-thick) obtained by solid-phase epitaxy. This LED structure is characterized by record low (<108 cm−2) density of lattice misfit dislocations at a total dislocation density of ∼8 × 108 cm−2. The photo- and electroluminescence spectra of obtained structures have been measured.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics, Ed. by T. Li, M. Mastro, and A. Dadgar (CRC Press, Boca Raton, 2011).
S. J. Pearton, B. S. Kang, Suku Kim, F. Ren, B. P. Gila, C. R. Abernathy, Jenshan Lin, and S. N. G. Chu, J. Phys.: Condens. Matter 16(29), R961 (2004).
H. Ishikawa, T. Jimbo, and T. Egawa, Phys. Status Solidi (a) 299(6), 2086 (2008).
S. Yoshida et al., Phys. Status Solidi (a) 297(2), 279 (2006).
S. A. Kukushkin and A. V. Osipov, Phys. Solid State 50, 1238 (2008).
L. M. Sorokin, A. E. Kalmykov, V. N. Bessolov, N. A. Feoktistov, A. V. Osipov, S. A. Kukushkin, and N. V. Veselov, Tech. Phys. Lett. 37, 326 (2011).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © S.A. Kukushkin, A.V. Osipov, S.G. Zhukov, E.E. Zavarin, W.V. Lundin, M.A. Sinitsyn, M.M. Rozhavskaya, A.F. Tsatsulnikov, S.I. Troshkov, N.A. Feoktistov, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 6, pp. 90–95.
Rights and permissions
About this article
Cite this article
Kukushkin, S.A., Osipov, A.V., Zhukov, S.G. et al. Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide. Tech. Phys. Lett. 38, 297–299 (2012). https://doi.org/10.1134/S1063785012030261
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063785012030261