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Generation (amplification) of terahertz radiation during resonant exciton formation in semiconductors

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Abstract

A new mechanism of the generation (amplification) of terahertz radiation in semiconductors is proposed, which is based on the quantum transitions between two-exciton and biexciton under conditions of single-photon excitation from the ground state of a crystal.

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Authors and Affiliations

  1. Institute of Applied Physics, Academy of Sciences of Moldova, MD-2028, Chisinau, Moldova

    P. I. Khadzhi, I. V. Belousov, A. V. Korovai & D. A. Markov

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  1. P. I. Khadzhi
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  2. I. V. Belousov
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  3. A. V. Korovai
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  4. D. A. Markov
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Corresponding author

Correspondence to P. I. Khadzhi.

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Original Russian Text © P.I. Khadzhi, I.V. Belousov, A.V. Korovai, D.A. Markov, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 6, pp. 15–21.

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Khadzhi, P.I., Belousov, I.V., Korovai, A.V. et al. Generation (amplification) of terahertz radiation during resonant exciton formation in semiconductors. Tech. Phys. Lett. 38, 261–264 (2012). https://doi.org/10.1134/S1063785012030236

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  • DOI: https://doi.org/10.1134/S1063785012030236

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