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Uncooled photodiodes based on InAsSb(P) with long-wavelength cut-off at λ = 5.8 μm

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Abstract

We have experimentally studied the parameters of room-temperature photodiodes based on gradient solid solutions of the InAsSb(P) system, having a long-wavelength cut-off at λ = 5.8 μm and various geometries of non-transparent contacts on the exposed p-InAsSb(P) surface. It is established that the sensitivity (photocurrent collection efficiency) strongly depends on the perimeter of this contact: photodiodes with net structure of this contact (increased perimeter and area) are characterized by increased sensitivity even despite greater degree of shadowing of the exposed surface by the contact.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi & N. M. Stus’

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  1. N. D. Il’inskaya
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  2. S. A. Karandashev
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  3. B. A. Matveev
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  4. M. A. Remennyi
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  5. N. M. Stus’
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Corresponding author

Correspondence to B. A. Matveev.

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Original Russian Text © N.D. Il’inskaya, S.A. Karandashev, B.A. Matveev, M.A. Remennyi, N.M. Stus’, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 5, pp. 85–90.

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Il’inskaya, N.D., Karandashev, S.A., Matveev, B.A. et al. Uncooled photodiodes based on InAsSb(P) with long-wavelength cut-off at λ = 5.8 μm. Tech. Phys. Lett. 38, 242–244 (2012). https://doi.org/10.1134/S1063785012030078

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  • DOI: https://doi.org/10.1134/S1063785012030078

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