Skip to main content
SpringerLink
Log in

LEDs based on InGaAs/GaAs heterostructures with magnetically controlled electroluminescence

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

A p-i-n light-emitting diode (LED) structure with an InGaAs/GaAs quantum well and a ferromagnetic GaMnAs layer as p-type semiconductor has been manufactured and investigated. An external magnetic field induces a decrease (up to ∼5% in a magnetic field of 3600 Oe at T = 10 K) in the GaMnAs layer resistance. In the voltage source regime, a change in this resistance leads to an increase in the intensity of electroluminescence of the given LED structure. This effect is due to ferromagnetism of the GaMnAs layer and vanishes at temperatures above the Curie point of this layer.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M. Holub and P. Bhattacharya, J. Phys. D: Appl. Phys. 40, R179 (2007).

    Article  ADS  Google Scholar 

  2. Concepts in Spin Electronics, Ed. by S. Maekawa (Oxford University Press, New York, 2006).

    MATH  Google Scholar 

  3. G. Schmidt, J. Phys. D: Appl. Phys. 38, R107 (2005).

    Article  ADS  Google Scholar 

  4. R. Fiederling P. Grabs, W. Ossau, G. Schmidt, and L. W. Molenkamp, Appl. Phys. Lett. 82(13), 2160 (2003).

    Article  ADS  Google Scholar 

  5. D. Saha, D. Basu, and P. Bhattacharya, Appl. Phys. Lett. 93, 194104 (2008).

    Article  ADS  Google Scholar 

  6. I. Appelbaum, K. J. Russel, D. J. Monsma, V. Narayanamurti, C. Marcus, M. P. Hanson, and A. C. Gossard, Appl. Phys. Lett. 83, 4571 (2003).

    Article  ADS  Google Scholar 

  7. D. K. Young, J. A. Gupta, E. Johnston-Halperin, R. Epstein, Y. Kato, and D. D. Awschalom, Semicond. Sci. Technol. 17, 275 (2002).

    Article  ADS  Google Scholar 

  8. B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, P. B. Demina, M. V. Dorokhin, V. V. Podol’skii, E. S. Demidov, Yu. N. Drozdov, and M. V. Sapozhnikov, Opt. Zh. 75(6), 56 (2008) [J. Opt. Tecnol. 75, 389 (2008).

    Google Scholar 

  9. M. V. Dorokhin, P. B. Demina, N. V. Baidus’, Yu. A. Danilov, B. N. Zvonkov, and M. M. Prokof’eva, Poverkhnost’, No. 5, 34 (2010) [J. Surf. Investig. 4, 390 (2010)].

    Google Scholar 

  10. B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, Yu. N. Drozdov, A. V. Kudrin, and M. V. Sapozhnikov, Fiz. Tverd. Tela (St. Petersburg) 52, 2124 (2010) [Phys. Solid. State 52, 2267 (2010)].

    Google Scholar 

  11. F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, Phys. Rev. B 57(4), R237 (1998).

    Article  Google Scholar 

  12. K. Y. Wang, K. W. Edmonds, R. P. Campion, L. X. Zhao, C. T. Foxon, and B. L. Gallagher, Phys. Rev. B 72, 085201 (2005).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Physicotechnical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603600, Russia

    A. V. Kudrin, M. V. Dorokhin, Yu. A. Danilov & E. I. Malysheva

Authors
  1. A. V. Kudrin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. V. Dorokhin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Yu. A. Danilov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. E. I. Malysheva
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. V. Kudrin.

Additional information

Original Russian Text © A.V. Kudrin, M.V. Dorokhin, Yu.A. Danilov, E.I. Malysheva, 2011, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2011, Vol. 37, No. 24, pp. 57–65.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kudrin, A.V., Dorokhin, M.V., Danilov, Y.A. et al. LEDs based on InGaAs/GaAs heterostructures with magnetically controlled electroluminescence. Tech. Phys. Lett. 37, 1168–1171 (2011). https://doi.org/10.1134/S1063785011120261

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063785011120261

Keywords

Search

Navigation