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Pulsed difference frequency generation regime in dual-wavelength vertical-external-cavity surface-emitting laser

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Abstract

The parameters of middle-IR radiation (λ ∼ 17 μm) generated as a result of the intracavity nonlinear optical interaction in a semiconductor dual-wavelength vertical-external-cavity surface emitting laser operating in a pulsed regime have been numerically analyzed. The dependence of the peak output radiation power on the length of the nonlinear crystal has been studied for various values of the loss factor.

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Authors and Affiliations

  1. Kotelnikov Institute of Radio Engineering and Electronics (Saratov Division), Russian Academy of Sciences, Saratov, 410019, Russia

    Yu. A. Morozov, M. Yu. Morozov & I. V. Krasnikova

  2. Saratov State Technical University, Saratov, 410054, Russia

    Yu. A. Morozov, M. Yu. Morozov & I. V. Krasnikova

Authors
  1. Yu. A. Morozov
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  2. M. Yu. Morozov
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  3. I. V. Krasnikova
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Corresponding author

Correspondence to Yu. A. Morozov.

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Original Russian Text © Yu.A. Morozov, M.Yu. Morozov, I.V. Krasnikova, 2011, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2011, Vol. 37, No. 23, pp. 53–60.

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Morozov, Y.A., Morozov, M.Y. & Krasnikova, I.V. Pulsed difference frequency generation regime in dual-wavelength vertical-external-cavity surface-emitting laser. Tech. Phys. Lett. 37, 1112–1115 (2011). https://doi.org/10.1134/S1063785011120108

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  • DOI: https://doi.org/10.1134/S1063785011120108

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